12N03LB 查看數據表（PDF） - Infineon Technologies
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12N03LB Datasheet PDF : 12 Pages
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Type
OptiMOS®2 Power-Transistor
Package
Marking
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD12N03LB G
IPU12N03LB G
IPS12N03LB G
IPF12N03LB G
Product Summary
V DS
R DS(on),max
ID
30
V
11.6 mΩ
30
A
Type
IPD12N03LB G
IPS12N03LB G
IPF12N03LB G
IPU12N03LB G
Package
Marking
PG-TO252-3-11
12N03LB
PG-TO251-3-11
12N03LB
PG-TO252-3-23
12N03LB
PG-TO251-3-1
12N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C2)
T C=100 °C
T C=25 °C3)
I D=30 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
64
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.5
page 1
2006-05-15
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