IRF630B 查看數據表（PDF） - Inchange Semiconductor

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IRF630B

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRF630B

DESCRIPTION

·Drain Current –ID= 9A@ TC=25℃

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.4Ω(Max)

·Fast Switching Speed

APPLICATIONS

·Desinged for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for unin-

terrupted power supply and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER

VALUE UNIT

VDSS

Drain-Source Voltage (VGS=0)

200

V

VGS

Gate-Source Voltage

±30

V

ID

Drain Current-continuous@ TC=25℃

9

A

PD

Power Dissipation@TC=25℃

72

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

1.74

62.5

℃/W

℃/W

isc Website：www.iscsemi.cn

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