SIHFL9014T-E3(2014) 查看數據表（PDF） - Vishay Semiconductors

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SIHFL9014T-E3
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

VDS

Vary tp to obtain

required IAS

Rg

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

IRFL9014, SiHFL9014

Vishay Siliconix

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

400

ID

Top - 0.80 A

- 1.1 A

300

Bottom - 1.8 A

200

100

VDD = - 25 V

0

25

50

75

100

125

150

91195_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S14-1686-Rev. F, 18-Aug-14

5

Document Number: 91195

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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