IRFL9014TRA 查看數據表（PDF） - Vishay Semiconductors
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IRFL9014TRA Datasheet PDF : 8 Pages
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IRFL9014, SiHFL9014
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 1.8
A
-
-
- 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb
80
160
ns
Qrr
-
0.096 0.19 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
Top -15 V
101
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
10-1
10-1
20 µs Pulse Width
TC = 25 °C
100
101
91195_01
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
100
10-1
VGS
Top -15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
20 µs Pulse Width
TC = 150 °C
101
91195_02
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
101
25 °C
150 °C
100
10-1
20 µs Pulse Width
VDS = - 25 V
4
5
6
7
8
9
10
91195_03
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
2.5
ID = - 6.7 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91195_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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