IRFB41N15DPBF 查看數據表（PDF） - International Rectifier
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IRFB41N15DPBF Datasheet PDF : 13 Pages
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = C gd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 25A
16
12
VDS = 120V
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80 100 120
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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