IRGIB10B60KD1 查看數據表（PDF） - International Rectifier

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IRGIB10B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGIB10B60KD1

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3

R4R4

τCτ

Ri (°C/W)

0.3628

0.2582

τi (sec)

0.00018

0.000695

τ3 τ3

τ4 τ4

1.1008 0.075305

1.6973 1.781

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

10

100

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50

1

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3

τ3 τ3

R4R4

τCτ

Ri (°C/W)

0.9004

1.3642

τi (sec)

0.000103

0.000693

τ4 τ4

1.4540 0.033978

1.5805 1.6699

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

10

100

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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