IRL3803
10000
8000
C iss
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH OR TE D
C rss = C gd
C oss = C ds + C gd
6000
C oss
4000
2000
C rss
0
A
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
TJ = 17 5°C
100
TJ = 25°C
10
0.4
VGS = 0V A
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
ID = 71A
12
V DS = 24V
V DS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
100
100µs
1m s
TC = 25°C
TJ = 175°C
S ing le P u lse
10
1
10
10ms
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4/8
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