IS61SP6464-117PQ 查看數據表（PDF） - Integrated Silicon Solution

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IS61SP6464-117PQ

64K x 64 SYNCHRONOUS PIPELINE STATIC RAM

Integrated Silicon Solution 

IS61SP6464

DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage

ILI

Input Leakage Current

ILO

Output Leakage Current

Test Conditions

IOH = –4.0 mA

IOL = 8 mA

GND - VIN - VCCQ(2)

GND - VOUT - VCCQ, OE = VIH

Com.

Ind.

Com.

Ind.

ISSI ®

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2.0 VCCQ + 0.3 V

–0.3

0.8

V

–2

2

µA

–10

10

–2

2

µA

–10

10

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Input/Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

5

pF

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

Unit

0V to 3.0V

1.5 ns

1.5V

See Figures 1 and 2

AC TEST LOADS

ZO = 50Ω

Output

Buffer

30 pF

Figure 1

50Ω

1.5V

3.3V

317 Ω

OUTPUT

5 pF

Including

jig and

scope

Figure 2

351 Ω

Integrated Silicon Solution, Inc. — 1-800-379-4774

7

Rev. A

04/17/01

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