LTE42005S 查看數據表（PDF） - Philips Electronics
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LTE42005S Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LTE42005S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
Ptot
Tstg
Tj
Tsld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
CONDITIONS
MIN.
open emitter
−
RBE = 100 Ω
−
open base
−
open collector
−
−
Tmb ≤ 75 °C
−
−65
−
at 0.3 mm from case; t = 10 s −
MAX.
40
35
16
3
250
4
+200
200
235
UNIT
V
V
V
V
mA
W
°C
°C
°C
103
handbook, halfpage
IC
(mA)
(3)
102
(1)
(2)
10
MBH902
1
10
15
20
25
30 35
VCE (V)
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 100 Ω.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
handbook, h5alfpage
Ptot
(W)
4
MGD966
3
2
1
0
−50
0
50
100
150
200
Tmb (°C)
Fig.3 Power dissipation derating as a function of
mounting-base temperature.
1997 Feb 21
3
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