MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
1.5 M63812P
M63812FP
1.0
M63812GP
M63812KP
0.5
0.744
0.520
0.418
0.406
00
25
50
75 85 100
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
(M63812P)
400
Input Characteristics
4
3
Ta = –40°C
TTaa==2525°C
2
1
Ta=85°C
00
5 10 15 20 25 30
Input voltage VI (V)
Duty-Cycle-Collector Characteristics
(M63812P)
400
300
1~4
5
6
7
200
•The collector current values
100 represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
0
0
20 40 60 80
100
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63812FP)
400
300
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40 60
80
1~2
3
4
5
6
7
100
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63812FP)
400
300
1~3
4
5
200
6
7
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
20 40 60 80
100
Duty cycle (%)
300
200
•The collector current values
100 represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
0
20 40 60 80
1
2
3
4
5
6
7
100
Duty cycle (%)
Jan. 2000