MJE1123
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS* (continued)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
DC Current Gain
(IC = 1.0 Adc, VCE = 7.0 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
(IC = 2.0 Adc, VCE = 7.0 Vdc)
(IC = 2.0 Adc, VCE = 10 Vdc)
(IC = 4.0 Adc, VCE = 7.0 Vdc)
(IC = 4.0 Adc, VCE = 10 Vdc)
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
VBE(sat)
—
0.77
0.95
—
0.87
1.20
—
1.00
1.40
hFE
100
170
225
100
180
225
75
120
170
80
140
180
45
75
100
45
79
100
VBE(on)
—
0.75
0.90
—
0.84
1.00
—
0.90
1.20
fT
5.0
11.5
—
100
1
TJ = 25°C
10
IB = 20 mA
0.8
50 mA
0.6
IC = 4 A, IB = 100 mA
100 mA
0.4
1
120 mA
0.2
0.1
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0
10
20
Figure 1. Saturation Voltage versus Collector
Current as a Function of Base Drive
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
40
60
80
TJ, CASE TEMPERATURE (°C)
Figure 2. Saturation Voltage
versus Temperature
Unit
Vdc
—
Vdc
MHz
100
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
IB = 20 mA
50 mA
120 mA
TJ = 25°C
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base–Emitter Saturation Voltage
2
1.1
IC = 4 A, IB = 100 mA
1
0.9
IC = 2 A, IB = 50 mA
0.8
0.7
IC = 1 A, IB = 20 mA
0.6
20
40
60
80
100
TJ, CASE TEMPERATURE (°C)
Figure 4. Base–Emitter Saturation Voltage
versus Temperature
Motorola Bipolar Power Transistor Device Data