DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MMBT4403LT1 查看數據表(PDF) - Willas Electronic Corp.

零件编号
产品描述 (功能)
生产厂家
MMBT4403LT1
Willas
Willas Electronic Corp. 
MMBT4403LT1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
WILLAS
FM120-M+
MMBT4403LTTH1RU
1.0AGSeURnFAeCrEaMlOPUNuTrSpCHoOsTTeKTY BrAaRnRIsERisRtEoCTrIsFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
TYPICAL TRANSIENT CHARACTERISTICS
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low30power loss, high efficiency.
10
High current capability, low forward voltage drop.
7.0
20
High surge capability.
C eb
5.0
Guardring for overvoltage protection.
3.0
Ultra high-speed switching.
2.0
Sili1c0on epitaxial planar chip, metal silicon junction.
SOD-123H
0.146(3.7)
0.130(3.3)
T = 25°C
J
T J = 100°C
V C0C.0=123(00.3)VTyp.
I C / I B = 10
0.071(1.8)
0.056(1.4)
Lea7.d0-free parts meet environmental standards of
1.0
MIL-STD-19500 /228
RoH5.S0 product for packing code suffix "G"
C cb
0.7
0.5
Halogen free product for packing code suffix "H"
0.3
Mechanical data
3.0
0.2
Epoxy : UL94-V0 rated flame retardant
QT
QA
0.040(1.0)
0.024(0.6)
2.0
C a s e0.:1M o l0d.2e d0.p3l a s0t.5i c0,.7S O1.0D - 1 223.0H 3.0
5.0 7.0 10
20 30
,
Terminals :Plated terminals, solderable per MIL-STD-750
MethodRE20V2E6RSE VOLTAGE (VOLTS)
Polarity : Indicated bFyigcuatrheo3d.eCbaapnadcitance
0.1
100.031(0.8) T2y0p.
30
50 70 100
2000.031(03.080) Typ. 500
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
Dimensions in inches and (millimeters)
Mounting Position : Any
100
100
Weight : Approximated 0.011 gram
70
I C /I B = 10
70
50
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
50
V CC= 30V
I C / I B =10
Ratings at 25℃ ambient temperature unless otherwtisr @e VspCeC=c3if0ieVd.
Single
phase30half
wave,
60Hz,
resistive
of
inductive
tlor @adV.
=10V
CC
30
For capacitive load, derate current by 20%
20
t d@VBE(off) = 2.0V
t d@VBE(off) = 0V
20
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Rec1u0rrent Peak Reverse Voltage
VRRM
20
30
1400
50
60
80
100
150
200 Volts
Maximum RM7S.0 Voltage
VRMS
14
21
7.20 8
35
42
56
70
105
140 Volts
Maximum DC5.B0 locking Voltage
Maximum Avera1g0e Forwa2r0d Re3c0tified C5u0rren7t0 100
VDC
IO200
20
30
300 500
5.40 0
10
50
60
80
100
150
200
20 30 1.500 70 100
200 300 500
Volts
Amp
Peak Forward Surge Current 8.I3Cm, sCsOinLgLleEhCaTlf OsinRe-CwUavReRENIFTSM(mA)
superimposed on rated load (JEDEFCigmuertheod5). Turn–On Time
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
200
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
I C/I B = 20
I C , COL3L0ECTOR CURRENT (mA)
Figure 6. Rise Time
40
120
-55 to +150
- 65 to +175
Amp
℃/W
PF
CHARACTERISTICS 100
Maximum Forward Voltage at 1.0A DC
70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=51025℃
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
I
/I
C
B
=
100.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
10
t s’ = t s – 1/8 t f
I B1 = I B2
mAmp
1- Measured at 1 MHZ and applied reverse voltage3o0f 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
20
10
20 30
50 70 100
200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
20122-01112-06
WILLWAISLLEALSEECLTERCOTNRIOCNCICOCROPR. P.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]