NCV8508D2T50R4G(2009) 查看數據表（PDF） - ON Semiconductor

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NCV8508D2T50R4G
(Rev.:2009)

5.0 V, 250 mA LDO with Watchdog and RESET

ON Semiconductor 

NCV8508

VIN

RESET

−

Charge

+

Pump

11 V

Bandgap

1.25 V

+

Reference

−

WDI

Delay

Timing

Circuit

Falling

Edge

Detect

Internally

connected

on 7 lead

D2PAK

Current

Limit

Thermal

Shutdown

Watchdog

Circuit

Wakeup

Circuit

VOUT

Sense

Wakeup

Figure 2. Block Diagram

MAXIMUM RATINGS

Rating

Value

Unit

Input Voltage, VIN (DC)

−0.3 to 45

V

Peak Transient Voltage (46 V Load Dump @ VIN = 14 V)

60

V

Output Voltage, VOUT

−0.3 to 18

V

ESD Susceptibility:

Human Body Model

2.0

kV

Machine Model

150

V

Logic Inputs/Outputs (RESET, WDI, Wakeup)

−0.3 to +7.0

V

Operating Junction Temperature, TJ

−40 to150

°C

Storage Temperature Range, TS

−55 to +150

°C

Peak Reflow Soldering Temperature:

Reflow: (Note 1)

240 Peak

°C

260 Peak (Pb−Free)

(Note 3)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 60 second maximum above 183°C.

2. Depending on thermal properties of substrate RqJA = RqJC + RqJCA.

3. −5°C/+0°C allowable conditions, applies to both Pb and Pb−Free devices.

THERMAL CHARACTERISTICS

See Package Thermal Data Section (Page 10)

http://onsemi.com

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