NID5001NT4 查看數據表（PDF） - ON Semiconductor

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NID5001NT4

Self−Protected FET with Temperature and Current Limit

ON Semiconductor 

NID5001N

TYPICAL PERFORMANCE CURVES

0.14

0.12

0.1

VGS = 0 V

TJ = 25°C

0.08

0.06

0.04

0.02

0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 7. Diode Forward Voltage vs. Current

100

VGS = 5 V

SINGLE PULSE

10 TC = 25°C

Based upon a TJ = 100°C, Steady State.

dc

10 ms

1.0

1 ms

100 ms

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1.0

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Maximum Rated Forward Biased

Safe Operating Area

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