NID6002NT4G 查看數據表（PDF） - ON Semiconductor

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NID6002NT4G

Self−Protected FET with Temperature and Current Limit

ON Semiconductor 

NID6002N

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 50 Vdc, VGS = 5.0 Vdc,

IL = 1.3 Apk, L = 160 mH, RG = 25 W) (Note 3)

Operating and Storage Temperature Range

(Note 4)

Continuous

VDSS

VGS

ID

PD

RqJC

RqJA

RqJA

EAS

TJ, Tstg

70

Vdc

"14

Vdc

Internally Limited

W

1.3

2.5

°C/W

3.0

95

50

143

mJ

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.

3. Not subject to production test.

4. Normal pre−fault operating range. See thermal limit range conditions.

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