NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 37 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 10 Adc)
RDS(on)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc, RG = 2.5 Ω) (Note 3)
tr
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS = 4.5 Vdc, RG = 2.5 Ω) (Note 3)
tr
td(off)
Fall Time
tf
Gate Charge
QT
(VDS = 24 Vdc, ID = 37 Adc,
VGS = 4.5 Vdc) (Note 3)
Qgs
Qgd
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
VSD
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
trr
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3)
ta
tb
Reverse Recovery Stored Charge
QRR
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
Unit
30
−
−
25
Vdc
−
−
mV/°C
µAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
1.0
1.9
3.0
−
−3.8
−
mV/°C
mΩ
−
6.8
9.3
6.8
9.3
9.5
12.5
−
40
−
mhos
−
2050
2400
pF
−
640
800
−
225
310
−
10
18
ns
−
22
35
−
45
75
−
35
70
−
18
−
ns
−
70
−
−
32
−
−
30
−
−
28
−
nC
−
7.5
−
−
19
−
−
0.90
1.3
Vdc
−
0.75
−
−
37
−
ns
−
21
−
−
16
−
−
0.035
−
µC
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