PMD16K100 查看數據表（PDF） - Inchange Semiconductor
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PMD16K100 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
PMD16K60/80/100
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
PMD16K60
V(BR)CEO
Collector-emitter
breakdown voltage
PMD16K80
IC=0.1A ; IB=0
PMD16K100
VCEsat Collector-emitter saturation voltage IC=10A ;IB=40mA
VBEsat Base-emitter saturation voltage
IC=10A ;IB=40mA
VBE
Base-emitter on voltage
hFE
DC current gain
ICER
Collector cut-off current
IEBO
Emitter cut-off current
IC=10A ; VCE=3V
IC=10A ; VCE=3V
VCE=Rated VCEO; RBE=Ω
TC=150℃
VEB=5V; IC=0
fT
Transition frequency
IC=7A ; VCE=3V;f=1.0kHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
2.8
V
2.8
V
1000
20000
1.0
5.0
mA
2.0
mA
4.0
MHz
400
pF
2
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