SIA419DJ 查看數據表（PDF） - Vishay Semiconductors
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SIA419DJ Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 5 V thru 2 V
25
20
15
1.5 V
10
5
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
2
0
0.0
0.15
2400
SiA419DJ
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.09
VGS = 1.2 V
0.06
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
0.03
0.00
0
VGS = 4.5 V
5
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
ID = 8.8 A
4
2
VDS = 10 V
VDS = 16 V
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
1800
Ciss
1200
600
Coss
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.5
ID = 5.9 A
1.4
VGS = 1.8 V
1.3
VGS = 2.5 V, 4.5 V
1.2
1.1
VGS = 1.5 V
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74620
S09-1397-Rev. C, 20-Jul-09
www.vishay.com
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