SS8550D 查看數據表（PDF） - Weitron Technology
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SS8550D Datasheet PDF : 4 Pages
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SS8550
Plastic-Encapsulate Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
DEVICE MARKING
SS8550=SS8550D
TO-92
1
1. EMITTER
2
2. BASE
3
3. COLLECTOR
SS8550
Unit
-25
Vdc
-40
Vdc
-5.0
Vdc
-1.5
Adc
1.0
W
150
C
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(1) (IC= -0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc)
Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc)
1. Pulse Test: Pulse Width < 300 us, Duty Cycle <2.0%
Symbol
Min
Max
Unit
V(BR)CEO
-25
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
ICBO
-
-0.1
uAdc
IEBO
-
-0.1
uAdc
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