US5U29 查看數據表（PDF） - ROHM Semiconductor
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US5U29 Datasheet PDF : 5 Pages
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Transistor
US5U29
8
1000
Ta=25 C
Ta=125°C
7
6
VDD=−15V
ID=−1A
RG=10Ω
Pulsed
75°C
25°C
−20°C
100
5
100
125°C
10
1
75°C
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
Total Gate Charge : Qg[nC]
Fig.10 Dynamic Input Characteristics
10
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage :VF [V]
Fig.11 Forward Temperature Characteristics
0.1
25°C
0.01
0.001
−20°C
0.0001
0
10
20
30
40
Reverse Voltage : VR[V]
Fig.12 Reverse Temperature Characteristics
zMeasurement circuits
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.13 Switching Time Measurement Circuit
VGS
10%
50%
Pulse Width
10%
VDS
90%
50%
90%
10%
90%
td(on) tr
ton
td(off)
tf
toff
Fig.14 Switching Waveforms
VGS
IG(Const)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.15 Gate Charge Measurement Circuit
VG
Qg
VGS
Qgs Qgd
Charge
Fig.16 Gate Charge Waveforms
Rev.C
4/4
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