BUX22 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
BUX22 Datasheet PDF : 4 Pages
| |||
BUX22
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 200 V
ICEX Collector Cut-off
Current
VCE = 300 V
Tcase = 125 oC
VCE = 300 V
VBE = -1.5V
VBE = -1.5V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEB = 5 V
IC = 200 mA
VEBO
VCE(sat)∗
Emitter-Base Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IE = 50 mA
IC = 10 A
IC = 20 A
IB = 1 A
IB = 2.5 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 20 A
IB = 2.5 A
hFE∗ DC Current Gain
IC = 10 A
IC = 20 A
VCE = 4 V
VCE = 4 V
IS/b Second Breakdown
Collector Current
VCE = 140 V
VCE = 20 V
t=1s
t=1s
fT
Transistor Frequency VCE = 15 V
IC = 2 A
f = 10 MHz
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC = 20 A
VCC = 100 V
IC = 20 A
IB2 = - 2.5 A
IB1 = 2.5 A
IB1 = 2.5 A
VCC = 100V
Clamped Es/b
Vclamp= 250 V
Collector Current
L = 500 µH
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
Min.
250
7
20
10
0.15
17.5
10
25
Typ.
0.2
0.32
1.1
0.22
1.5
0.17
Max.
3
3
12
1
1
1.5
1.5
60
1.3
2
0.5
Unit
mA
mA
mA
mA
V
V
V
V
V
A
A
MHz
µs
µs
µs
A
2/4
Share Link: 