T2550H-600TRG 查看數據表（PDF） - STMicroelectronics
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T2550H-600TRG Datasheet PDF : 8 Pages
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T2550H
Characteristics
Figure 1. Maximum power dissipation versus Figure 2. RMS on-state current versus case
RMS on-state current (full cycle)
temperature (full cycle)
P(W)
35
30
25
20
15
10
5
IT(RMS)(A)
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
IT(RMS)(A)
30
25
20
15
10
5
0
0
25
TC(°C)
50
75
100
125
150
Figure 3. Relative variation of thermal
Figure 4. On-state characteristics (maximum
impedance versus pulse duration
values)
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
ITM(A)
300
100
Tj max.
Vt0 = 0.80V
Rd = 19 mΩ
Tj = Tj max.
10
Tj = 25°C.
0.01
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 5.
Surge peak on-state current versus Figure 6.
number of cycles
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
ITSM(A)
300
250
200
150
100
Repetitive
TC=125°C
Non repetitive
Tj initial=25°C
50
0
1
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM(A), I2t (A2s)
10000
dI/dt limitation: 50 A/µs
Tj initial=25 °C
1000
ITSM
100
0.01
tp(ms)
0.10
I²t
1.00
10.00
3/8
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