STD616A-1(1999) 查看數據表（PDF） - STMicroelectronics
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STD616A-1 Datasheet PDF : 5 Pages
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STD616A-1
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
6 .2 5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off
Current (VBE = 0 V)
VCE = 1000 V
VCE = 1000 V Tj = 125 oC
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 100 mA L = 25 mH
VBEO
VCE(sat )∗
Collector-Base
Sustaining Voltage
Collector-Emitter
Saturation Voltage
IC = 1 mA
IC = 250 mA
IC = 0.8 A
IB = 65 mA
IB = 250 mA
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 250 mA
IC = 0.8 A
IB = 65 mA
IB = 250 mA
hF E∗ DC Current Gain
IC = 200 µA
IC = 300 mA
IC = 480 mA
IC = 1.6 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
RESISTIVE LOAD
ton
Turn On Time
ts
Storage Time
tf
Fall Time
VCC = 250 V
IB1 = 65 mA
IC = 250 mA
IB2 = -130 mA
RESISTIVE LOAD
ton
Turn On Time
ts
Storage Time
tf
Fall Time
VCC = 250 V
IB1 = 160 mA
IC = 0.8 A
IB2 = -0.4 A
INDUCTIVE LO AD
ts
Storage Time
tf
Fall Time
Vcl = 300 V
IB1 = 65 mA
L = 200 µH
IC = 250 mA
IB2 = -130 mA
INDUCTIVE LO AD
ts
Turn On Time
tf
Storage Time
Fall Time
Vcl = 300 V
IB1 = 160 mA
L = 200 µH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 0.8 A
IB2= -0.4 A
Min. Typ.
450
12
17
25
12
4
Max.
50
0.5
0.3
0.5
1.0
1.2
0.2
5
0.65
1
2.5
0.35
5
0.5
2.5
0.25
Unit
µA
mA
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/5
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