FDS4675(2001) 查看數據表（PDF） - Fairchild Semiconductor
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FDS4675 Datasheet PDF : 5 Pages
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February 2001
FDS4675
40V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –11 A, –40 V
RDS(ON) = 0.013 Ω @ VGS = –10 V
RDS(ON) = 0.017 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4675
FDS4675
13’’
Ratings
–40
±20
–11
–50
2.4 (steady state)
1.4
1.2
-55 to +175
Units
V
V
A
W
°C
62.5 (steady state), 50 (10 sec)
125
25
°C/W
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4675 Rev C(W)
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