IRF630S 查看數據表（PDF） - Vishay Semiconductors

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IRF630S

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRF630S, SiHF630S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

200

VGS = 10 V

43

7.0

23

Single

0.40

D2PAK (TO-263)

K

DS

G

D

G

S

N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

D2PAK (TO-263)

SiHF630S-GE3

IRF630SPbF

SiHF630S-E3

D2PAK (TO-263)

SiHF630STRL-GE3a

IRF630STRLPbFa

SiHF630STL-E3a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

TC = 25 °C

VGS at 10 V

ID

TC = 100 °C

Pulsed Drain Currenta

IDM

Linear Derating Factor

Linear Derating Factor (PCB Mount)e

Single Pulse Avalanche Energyb

EAS

Repetitive Avalanche Currenta

IAR

Repetitive Avalanche Energya

EAR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)e

TC = 25 °C

PD

TA = 25 °C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Peak Diode Recovery dV/dtc

dV/dt

D2PAK (TO-263)

SiHF630STRR-GE3a

IRF630STRRPbFa

SiHF630STR-E3a

LIMIT

200

± 20

9.0

5.7

36

0.59

0.025

250

9.0

7.4

74

3.0

5.0

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

Document Number: 91032

S11-1047-Rev. C, 30-May-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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