RT8202B 查看數據表（PDF） - Richtek Technology
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RT8202B Datasheet PDF : 19 Pages
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RT8202/A/B
Parameter
Symbol
Test Conditions
Logic I/O
EN/DEM Logic Low Voltage
EN/DEM Logic High Voltage
EN/DEM Floating Voltage
EN/DEM Open
Logic Input Current
EN/DEM = VDD
EN/DEM = 0
PGOOD (upper side threshold decide by OV threshold)
Trip Threshold (Falling)
Measured at FB, with respect to
reference, no load.
Hysteresis = 3%
Fault Propagation Delay
Falling edge, FB forced below
PGOOD trip threshold
Output Low Voltage
ISINK = 1mA
Leakage Current
High state, forced to 5.0V
Min Typ Max Unit
--
--
0.8
V
2.9
--
--
V
--
2
--
V
--
1
5
A
5
1
--
13
10
7
%
--
2.5
--
s
--
--
0.4
V
--
--
1
A
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard. The case point of θJC is on the expose pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS8202/A/B-07 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
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