BD908 查看數據表（PDF） - Inchange Semiconductor

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BD908

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD908

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= -10A; IB= -2.5A

VBE(on) Base-Emitter On Voltage

IC= -5A ; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

ICEO

Collector Cutoff Current

VCE= -30V; IB=B 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -5A; VCE= -4V

hFE-3

DC Current Gain

IC= -10A ; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V; ftest= 1.0MHz

MIN MAX UNIT

-60

V

-1.0

V

-3.0

V

-2.5

V

-1.5

V

-0.5 mA

-1.0 mA

-1.0 mA

40

250

15

150

5

3.0

MHz

isc Website：www.iscsemi.cn

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