SIM-22ST(2010) 查看數據表（PDF） - ROHM Semiconductor

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SIM-22ST
(Rev.:2010)

Infrared light emitting diode, side-view type

ROHM Semiconductor 

Infrared light emitting diode, side-view type

SIM-22ST

The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.

Applications

Light source for sensors

Features

1) Compact package (4.7x4.6 mm) with lens.

2) High efficiency, high output.

3) Emission spectrum well suited to silicon detectors

(P = 950 nm).

4) Good current-optical output linearity.

5) Long life, high reliability.

Dimensions (Unit : mm)

4.1

4.6 ± 0.1

Notes:

1. Tolerances are ± 0.2 unless

otherwise indicated.

2. Value in parenthese is size

at base of leads.

2-C0.7

0.15

R0.75

R0.5

2−0.65

2−0.45

1

2

(2.54)

R0.5

0.40

0.64

1 Cathode

2 Anode

Absolute maximum ratings (Ta=25C)

Parameter

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

∗ Pulse width = 0.1ms, duty ratio 1%

Symbol

Limits

Unit

IF

50

mA

VR

5

V

PD

80

mW

IFP∗

0.5

A

Topr

−25 to +85

°C

Tstg

−30 to +100

°C

Electrical and optical characteristics (Ta=25C)

Parameter

Symbol Min. Typ.

Emitting strength

IE

−

0.8

Emitting strength

IE

0.48 1.3

Forward voltage

VF

−

1.3

Reverse current

IR

−

−

Peak light emitting wavelength

λP

−

950

Spectral line half width

Δλ

−

40

Half-viewing angle

θ1/2

−

±30

Response time

tr tf

−

1.0

Cut-off frequency

fc

∗ According to our measurement procedures.

−

1.0

Max. Unit

− mW/sr IF=10mA

1.94 mA IF=10mA∗

1.6

V IF=50mA

10

μA VR=5V

−

nm IF=10mA

−

nm IF=20mA

−

deg IF=50mA

−

μs IF=50mA

− MHz IF=50mA

Conditions

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

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