STP16NF06LFP 查看數據表（PDF） - STMicroelectronics
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STP16NF06LFP
STMicroelectronics
STP16NF06LFP Datasheet PDF : 9 Pages
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STP16NF06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 8 A
10
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
37
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 48 V ID = 16 A VGS= 5V
7.3
10
nC
2.1
nC
3.1
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
VDD = 30 V
ID = 8 A
20
ns
RG = 4.7Ω,
VGS = 4.5 V
12.5
ns
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 16 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 16 A
di/dt = 100A/µs
VDD = 16 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
50
67.5
2.7
Max.
16
64
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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