TSOP322..
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Supply Voltage
(Pin 2)
Supply Current
(Pin 2)
Output Voltage
(Pin 1)
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(Pin 1)
(Tamb ≤ 85 °C)
t ≤ 10 s, 1 mm from case
Symbol
Value
Unit
VS
- 0.3 to + 6.0
V
IS
3
mA
VO
- 0.3 to
V
(VS + 0.3)
IO
10
mA
Tj
100
°C
Tstg
- 25 to + 85
°C
Tamb
- 25 to + 85
°C
Ptot
30
mW
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Supply Current (Pin 2)
Ev = 0
ISD
0.7
Ev = 40 klx, sunlight
ISH
Supply Voltage
VS
2.7
Transmission Distance
Ev = 0, test signal see fig.1,
d
IR diode TSAL6200,
IF = 250 mA
Output Voltage Low (Pin 1)
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
Minimum Irradiance (30 - 40
kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
Minimum Irradiance (56 kHz)
Minimum Irradiance (30 - 40
kHz)
Minimum Irradiance (56 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
Ee min
Ee min
Maximum Irradiance
Directivity
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Angle of half transmission
distance
Ee max
30
ϕ1/2
Typ.
1.2
1.3
35
0.2
0.3
0.35
0.45
± 45
Max
Unit
1.5
mA
mA
5.5
V
m
250
mV
0.4
mW/m2
0.5
mW/m2
0.5
mW/m2
0.6
mW/m2
W/m2
deg
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2
Document Number 82228
Rev. 1.2, 31-Jan-05