TS912 查看數據表（PDF） - STMicroelectronics
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TS912 Datasheet PDF : 18 Pages
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Electrical characteristics
TS912
Table 4.
VCC+ = 5V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise
specified)
Symbol
Parameter
Min. Typ. Max. Unit
Vio
ΔVio
Iio
Iib
ICC
CMR
SVR
Avd
VOH
VOL
Io
GBP
SR+
SR-
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
TS912B
Tmin ≤ Tamb ≤ Tmax
TS912
TS912A
TS912B
Input offset voltage drift
Input offset current (1)
Tmin ≤ Tamb ≤ Tmax
Input bias current (1)
Tmin ≤ Tamb ≤ Tmax
Supply current (per amplifier, AVCL = 1, no load)
Tmin ≤ Tamb ≤ Tmax
Common mode rejection ratio
Vic = 1.5 to 3.5V, Vo = 2.5V
Supply voltage rejection ratio (VCC+ = 3 to 5V, Vo = VCC/2)
Large signal voltage gain (RL = 10kΩ, Vo = 1.5V to 3.5V)
Tmin ≤ Tamb ≤ Tmax
High level output voltage (Vid = 1V)
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10kΩ
RL = 600Ω
Low level output voltage (Vid = -1V)
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10kΩ
RL = 600Ω
Output short-circuit current (Vid = ±1V)
Source (Vo = VCC-)
Sink (Vo = VCC+)
Gain bandwidth product
(AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz)
Slew rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1V to 4V)
Slew rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1V to 4V)
10
5
2
mV
12
7
3
5
μV/°C
1
100
200
pA
1
150
300
pA
230 350
450
μA
60 85
dB
55 80
10 40
7
dB
V/mV
4.95
4.9 4.95
4.25 4.55
3.7
V
4.8
4.1
50
40 100
350 500
1400
mV
150
750
45 65
45 65
1
0.8
0.6
mA
MHz
V/μs
V/μs
6/18
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