NGTB25N120FLWG 查看數據表（PDF） - ON Semiconductor
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NGTB25N120FLWG Datasheet PDF : 10 Pages
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NGTB25N120FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.65
1.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 25 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off switching loss
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
1200
1.55
−
4.5
−
−
−
−
−
−
Typ
−
2.0
2.2
5.5
−
−
−
5200
144
94
220
40
98
91
26
228
160
1.50
0.95
2.45
88
28
240
270
1.8
1.6
3.4
Max
−
2.2
−
6.5
0.5
2
100
−
−
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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