FDB8880 查看數據表（PDF） - Fairchild Semiconductor
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FDB8880 Datasheet PDF : 11 Pages
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February 2005
FDP8880 / FDB8880
N-Channel PowerTrench® MOSFET
30V, 54A, 11.6mΩ
Features
rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A
rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
SOURCE
DRAIN
GATE
G
TO-220AB
S
FDP SERIES
©2005 Fairchild Semiconductor Corporation
1
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
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