2SB1440 查看數據表（PDF） - Panasonic Corporation
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2SB1440 Datasheet PDF : 3 Pages
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Transistors
2SB1440
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD2185
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
123
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.4±0.08
1.5±0.1
3˚
0.5±0.08
0.4±0.04
/ ■ Absolute Maximum Ratings Ta = 25°C
45˚
3.0±0.15
e Parameter
Symbol Rating
Unit
pe) Collector-base voltage (Emitter open) VCBO
−50
V
nc d ge. ed ty Collector-emitter voltage (Base open) VCEO
−50
V
sta tinu Emitter-base voltage (Collector open) VEBO
−5
V
a e cycle iscon Collector current
IC
−2
A
life d, d Peak collector current
ICP
−3
A
n u duct type Collector power dissipation *
PC
1
W
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
wing disco Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
in n follo ed thickness of 1.7 mm for the collector portion
Marking Symbol: 1 I
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
a o includestype, plan ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
Min Typ Max
M is ntin tena Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−50
isco ain Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−50
e/D e, m Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
D nanc e typ Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
inte anc Forward current transfer ratio *1
hFE1 *2 VCE = −2 V, IC = −200 mA
120
340
Ma inten hFE2 VCE = −2 V, IC = −1 A
60
ma Collector-emitter saturation voltage *1 VCE(sat) IC = −1 A, IB = −50 mA
− 0.2 − 0.3
laned Base-emitter saturation voltage *1
VBE(sat) IC = −1 A, IB = −50 mA
− 0.85 −1.2
(p Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
150
Unit
V
V
V
µA
V
V
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
45 60
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: October 2003
SJC00085DED
1
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