TSMBJ1009C-130(2003) 查看數據表（PDF） - Micro Commercial Components
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TSMBJ1009C-130 Datasheet PDF : 4 Pages
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TSMBJ1009C-130
MCC
ELECTRICAL CHARACTERISTIC @25℃ Unless otherwise specified
Parameter
Symbol
Units
Limit
Rated
Repetitive Off
-state Voltage
VDRM
Volts
Max
Off-state
Leakage
Curr ent@VDRM
IDRM
uA
Max
Breakover
Voltage
VBO
Volts
Max
On-State
Voltage
@IT=1.0A
VT
Volts
Max
Breakover Current
IBO-
IBO+
mA mA
Min Max
Holding Current
IH-
IH+
mA mA
Min Max
Off-State
Capacitance
CJ
pF
Typ.
TSMBJ1009C-130 120
5
160
5
50
800
150
800
120
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
GR-1089-CORE
500
8/20 us
IEC 61000-4-5
400
10/160 us
FCC Part 68
200
10/700 us
ITU-T K20/21
200
10/560 us
FCC Part 68
150
10/1000 us
GR-1089-CORE
100
100
50
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
Half value
0
tr
tp
TIME
Symbol
Parameter
I
VDRM
Stand-off voltage
IPP
IDRM
Leakage current at stand-off voltage
VBR
Breakdown voltage
IBR
Breakdown current
VBO
Breakover voltage
IBO
Breakover current
IBO
IH
IBR
IDRM
VT
IH
Holding current
NOTE: 1
VT
On state voltage
IPP
Peak pulse current
CO
Off-state capacitance
NOTE: 2
NOTE：
1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
V
VBR
VDRM
VBO
Revision: 3
www.mccsemi.com
2003/04/30
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