2SD20640S 查看數據表（PDF） - Panasonic Corporation

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2SD20640S

Silicon NPN triple diffusion planar type

Panasonic Corporation 

Power Transistors

2SD2064

Silicon NPN triple diffusion planar type

For high power amplification

Complementary to 2SB1371

15.0±0.3

11.0±0.2

Unit: mm

5.0±0.2

(3.2)

■ Features

φ 3.2±0.1

• Excellent collector current IC characteristics of forward current

transfer ratio hFE

• Wide safe operation area

2.0±0.2

2.0±0.1

• High transition frequency fT

• Full-pcak package which can be installed to the heat sink with one

1.1±0.1

0.6±0.2

/ screw

5.45±0.3

e e) ■ Absolute Maximum Ratings TC = 25°C

c e. d typ Parameter

Symbol Rating

Unit

n d stag tinue Collector-base voltage (Emitter open) VCBO

120

V

a e cle con Collector-emitter voltage (Base open) VCEO

120

V

lifecy , dis Emitter-base voltage (Collector open) VEBO

5

V

n u ct ped Collector current

IC

6

A

te tin Produ ed ty Peak collector current

ICP

10

A

ur tinu Collector power dissipation

PC

70

W

ing fo iscon Ta = 25°C

3

in n llow d d Junction temperature

Tj

150

°C

s fo lane Storage temperature

Tstg −55 to +150 °C

a cotinued incalnucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C

M is con inten Parameter

Symbol

Conditions

/Dis ma Base-emitter voltage

D ance type, Collector-base cutoff current (Emitter open)

ten ce Emitter-base cutoff current (Collector open)

Main tenan Forward current transfer ratio

(planed main Collector-emitter saturation voltage

VBE

ICBO

IEBO

hFE1

hFE2 *

hFE3

VCE(sat)

VCE = 5 V, IC = 4 A

VCB = 120 V, IE = 0

VEB = 3 V, IC = 0

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 1 A

VCE = 5 V, IC = 4 A

IC = 4 A, IB = 0.4 A

10.9±0.5

123

1: Base

2: Collector

3: Emitter

EIAJ: SC-92

TOP-3F-A1 Package

Min Typ Max Unit

1.8

V

50

µA

50

µA

20



60

200

20

2.0

V

Transition frequency

fT

VCE = 5 V, IC = 0.5 A, f = 1 MHz

20

MHz

Collector output capacitance

(Common base, input open circuited)

Cob VCB = 10 V, IE = 0, f = 1 MHz

80

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

S

P

hFE2

60 to 120

80 to 160 100 to 200

Publication date: September 2003

SJD00243BED

1

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