D401 查看數據表（PDF） - Inchange Semiconductor
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D401 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=0.5mA; IB=0
VCEsat Collector-emitter saturation voltage IC=500m A;IB=50m A
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.4A ; VCE=10V
fT
Transition frequency
IC=0.4A ; VCE=10V
hFE classifications
R
O
Y
G
40-80 70-140 120-240 200-400
Product Specification
2SD401
MIN TYP. MAX UNIT
150
V
200
V
5
V
1.0
V
50
μA
50
μA
40
400
5
MHz
2
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