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FOD8333 查看數據表(PDF) - Fairchild Semiconductor

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FOD8333 Datasheet PDF : 34 Pages
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11. Increasing the Output Drive Current Using an
External Booster Stage
If larger gate drive capability is needed for large IGBT
modules or parallel operation, an output booster stage
may be added to driver for optimum performance.
A possible implementation is by a discrete NPN/PNP
totem-pole configuration. These booster transistors
should be fast switching and have sufficient current gain
to deliver the desired peak output current.
FOD8333
VE 16
VLED2+ 15
DESAT 14
VDD 13
VSS 12
VO 11
VCLAMP 10
VSS 9
0.1µF
0.1µF
CBLANK
DDESAT
100Ω
RG
+
Figure 58. Output Booster Stage for Increased Output Drive Current
©2014 Fairchild Semiconductor Corporation
FOD8333 Rev. 1.0.3
29
www.fairchildsemi.com

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