2N5555 查看數據表（PDF） - ON Semiconductor
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2N5555 Datasheet PDF : 8 Pages
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ON Semiconductort
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
2N5555
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IGF
PD
TJ
Tstg
Value
25
25
25
10
350
2.8
–65 to +150
–65 to +150
2 SOURCE
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Symbol
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
Min
Max
Unit
25
—
Vdc
—
1.0
nAdc
—
10
nAdc
—
2.0
µAdc
15
—
mAdc
—
1.0
Vdc
—
1.5
Vdc
—
150
Ohms
—
150
Ohms
—
5.0
pF
—
1.2
pF
—
5.0
ns
—
5.0
ns
—
15
ns
—
10
ns
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
2N5555/D
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