IPS06N03LA 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
IPS06N03LA Datasheet PDF : 11 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
10
IPD06N03LA IPF06N03LA
IPS06N03LA IPU06N03LA
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
9
8
2
7
98 %
6
typ
5
400 µA
1.5
40 µA
4
1
3
2
0.5
1
0
-60 -20 20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. Capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25 °C
Ciss
103
1000
Coss
100
175 °C
175 °C, 98%
102
100
Crss
25 °C, 98%
10
10
0
Rev. 1.5
10
20
V DS [V]
1
30
0.0
page 6
0.5
1.0
1.5
2.0
V SD [V]
2004-03-23
Share Link: 