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IPS06N03LA 查看數據表(PDF) - Infineon Technologies

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产品描述 (功能)
生产厂家
IPS06N03LA
Infineon
Infineon Technologies 
IPS06N03LA Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
13 Avalanche characteristics
I AS=f(t AV); R GS=25
parameter: Tj(start)
100
150 °C
100 °C
25 °C
IPD06N03LA IPF06N03LA
IPS06N03LA IPU06N03LA
14 Typ. gate charge
V GS=f(Q gate); I D=25 A pulsed
parameter: V DD
12
15 V
10
5V
20 V
8
10
6
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
1000
0
10
20
30
Q gate [nC]
16 Gate charge waveforms
29
V GS
28
27
26
25
24
V g s(th)
23
22
21
20
-60 -20 20
60 100 140 180
T j [°C]
Q g (th)
Q gs
Rev. 1.5
page 7
Qg
Q sw
Q gd
Q gate
2004-03-23

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