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IPS06N03LA 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
IPS06N03LA
OptiMOS®2 Power-Transistor
Infineon Technologies
IPS06N03LA Datasheet PDF : 11 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter: T
j(start)
100
150 °C
100 °C
25 °C
IPD06N03LA IPF06N03LA
IPS06N03LA IPU06N03LA
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=25 A pulsed
parameter:
V
DD
12
15 V
10
5V
20 V
8
10
6
4
2
1
1
10
100
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
0
1000
0
10
20
30
Q
gate
[nC]
16 Gate charge waveforms
29
V
GS
28
27
26
25
24
V
g s(th)
23
22
21
20
-60 -20 20
60 100 140 180
T
j
[°C]
Q
g (th)
Q
gs
Rev. 1.5
page 7
Q
g
Q
sw
Q
gd
Q
gate
2004-03-23
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