NGB8206ANSL3G 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
NGB8206ANSL3G Datasheet PDF : 9 Pages
| |||
NGB8206N, NGB8206AN
ELECTRICAL CHARACTERISTICS
Characteristic
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
Symbol
Test Conditions
td(off)
tf
td(off)
tf
td(on)
tr
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, RL = 33
W
VGE = 5 V
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, L = 300
mH
VGE = 5 V
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5
W
VGE = 5 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
Min Typ Max Unit
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
http://onsemi.com
4
Share Link: 