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零件编号
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K18A50D 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
K18A50D
Silicon N Channel MOS Type / FET
Toshiba
K18A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
20
8
7.5
10
7
16
6.7
12
6.5
8
4
VGS
=
6 V
COMMON SOURCE
Tc
=
25°C
PULSE TEST
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE V
DS
(V)
TK18A50D
I
D
– V
DS
50
10
8
COMMON SOURCE
40
Tc
=
25°C
PULSE TEST
7.5
30
7
20
6.5
10
VGS
=
6 V
0
0
10
20
30
40
DRAIN-SOURCE VOLTAGE V
DS
50
(V)
I
D
– V
GS
50
COMMON SOURCE
VDS
=
20 V
PULSE TEST
40
30
20
25
10
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
8
6
ID = 18 A
4
9
2
4.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
COMMON SOURCE
VDS
=
10 V
PULSE TEST
10
Tc
= −
55 °C
25
100
1
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
1
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10, 15 V
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2010-08-12
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