BA886 查看數據表（PDF） - Siemens AG

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BA886

Silicon PIN Diode

Siemens AG 

BA 886

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Forward voltage

VF

IF = 50 mA

Reverse current

IR

VR = 50 V

Diode capacitance

CT

f = 1 MHz, VR = 50 V

f= 100 MHz, VR = 0 V

Forward resistance

rf

f = 100 MHz

IF = 10 µA

IF = 1 mA

IF = 10 mA

Zero bias conductance

gp

f = 100 MHz, VR = 0 V

Series inductance

LS

min.

–

–

–

–

–

–

6.5

–

–

Values

Unit

typ.

max.

–

1.15

V

–

50

nA

pF

0.23

0.35

0.2

–

Ω

2400 –

58

–

7.8

10

40

–

µS

2

–

nH

Diode capacitance CT = f (VR)

f = 1 MHz / f = 100 MHz

Forward resistance rf = f (IF)

f = 100 MHz

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