MRF166W 查看數據表（PDF） - Motorola => Freescale
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MRF166W Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
• Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Low Crss — 4.5 pF @ VDS = 28 Volts
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF166W/D
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
1
3
5
4
FLANGE
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
ID
PD
65
Vdc
65
Vdc
± 40
Adc
8.0
ADC
175
Watts
1.0
°C/W
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Thermal Resistance — Junction to Case
RθJC
1.0
°C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF166W
1
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