PHD108NQ 查看數據表（PDF） - NXP Semiconductors.
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PHD108NQ Datasheet PDF : 12 Pages
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NXP Semiconductors
PHD108NQ03LT
N-channel TrenchMOS logic level FET
120
Ider
(%)
80
03ar58
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ar59
tp = 10 µs
100 μs
DC
1 ms
10
10 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHD108NQ03LT_4
Product data sheet
Rev. 04 — 5 June 2009
© NXP B.V. 2009. All rights reserved.
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