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FGA90N33ATDTU 查看數據表(PDF) - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FGA90N33ATDTU
330V, 90A PDP Trench IGBT
Fairchild Semiconductor
FGA90N33ATDTU Datasheet PDF : 9 Pages
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Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V
FM
Diode Forward Voltage
I
F
= 10A
T
C
= 25
o
C
T
C
= 125
o
C
t
rr
Diode Reverse Recovery Time
T
C
= 25
o
C
T
C
= 125
o
C
I
rr
Diode Peak Reverse Recovery
I
F
=10A, dI/dt = 200A/
μ
s
T
C
= 25
o
C
Current
T
C
= 125
o
C
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
o
C
T
C
= 125
o
C
Min.
-
-
-
-
-
-
-
-
Typ.
1.1
0.96
23
36
2.8
5.1
32
91
Max
1.5
-
-
-
-
-
-
-
Units
V
ns
A
nC
FGA90N33ATD Rev. C0
3
www.fairchildsemi.com
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