BF420 查看數據表（PDF） - Philips Electronics
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BF420 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF420; BF422
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF420
BF422
collector-emitter voltage
BF420
BF422
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on a printed-circuit board.
MIN. MAX. UNIT
−
300 V
−
250 V
−
300 V
−
250 V
−
5
V
−
50
mA
−
100 mA
−
50
mA
−
830 mW
−65 +150 °C
−
150 °C
−65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on a printed-circuit board.
CONDITIONS
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN. MAX. UNIT
−
10
nA
−
10
µA
−
50
nA
50
−
−
0.6 V
−
1.6 pF
60
−
MHz
1996 Dec 09
3
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