MT46V16M16BG-6 查看數據表（PDF） - Micron Technology

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MT46V16M16BG-6

256Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

256Mb: x4, x8, x16

DDR SDRAM

Figure 4: Functional Block Diagram: 32 Meg x 8

CKE

CK#

CK

CS#

WE#

CAS#

RAS#

CONTROL

LOGIC

BANK3

BANK2

BANK1

MODE REGISTERS

15

A0-A12,

BA0, BA1

15

ADDRESS

REGISTER

REFRESH 13

COUNTER

ROW-

13

ADDRESS

MUX

13

BANK0

ROW-

ADDRESS

LATCH

&

DECODER

8192

BANK0

MEMORY

ARRAY

(8192 x 512 x 16)

SENSE AMPLIFIERS

8192

2

BANK

CONTROL

LOGIC

2

COLUMN-

ADDRESS

9

10

COUNTER/

LATCH

1

I/O GATING

DM MASK LOGIC

512

(x16)

COLUMN

DECODER

CK

8

16

READ

LATCH 8

MUX

DATA

DLL

8

DQS

GENERATOR

DRVRS

1

COL0

INPUT

DQS

16

REGISTERS

1

MASK

WRITE

1

16

FIFO

2

&

DRIVERS

8

16

clk

clk

8

out

in DATA

1

1

1

RCVRS

8

8

8

CK

1

COL0

DQ0–

DQ7

DQS

DM

09005aef8076894f

256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

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