D1408 查看數據表（PDF） - Fairchild Semiconductor
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D1408 Datasheet PDF : 4 Pages
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KSD1408
Power Amplifier Applications
• Complement to KSB1017
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
80
80
5
4
0.4
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = 50mA, IB = 0
VCB = 80V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A. IB = 0.3A
VCE = 5V, IC = 3A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
Min.
80
40
15
Typ.
50
0.45
1
8
90
Max.
30
100
240
Units
V
µA
µA
1.5
V
1.5
V
MHz
pF
hFE1 Classification
Classification
hFE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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